| PART |
Description |
Maker |
| DPS96122-100I DPS96122-85I DPS96122-150I |
256K X 16 MULTI DEVICE SRAM MODULE, 100 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 85 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 150 ns, DMA68
|
|
| EMS256K8BMO2-55M EMS256K8BMO2-55D EMS256K8BMO6-55I |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDMA32
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, PDMA32
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM8256V-55/X0252 MSM8256V-025/X0252 MSM8256VM-025 |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDIP32
256K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CDIP32
256K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CDXA32
|
|
| EDI8M8257P100C6I EDI8M8257P120N6B |
256K X 8 MULTI DEVICE SRAM MODULE, 100 ns, DMA32
256K X 8 MULTI DEVICE SRAM MODULE, 120 ns, DMA32
|
ELECTRONIC DESIGNS INC
|
| CYM1831V33PZ-12C CYM1831V33PZ-25C |
256K X 8 MULTI DEVICE SRAM MODULE, 12 ns, PZMA64
256K X 8 MULTI DEVICE SRAM MODULE, 25 ns, PZMA64
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| DPS1027-45C DPS1027-45B DPS1027-45I DPS1027-45M |
256K X 4 MULTI DEVICE SRAM MODULE, 45 ns, DMA40
|
Twilight Technology, Inc.
Sanyo Electric Co., Ltd.
|
| EDI8LM32257V15AC |
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PQCC68
|
ELECTRONIC DESIGNS INC
|
| CYM1841LPN-55C CYM1841LPN-35C CYM1841LPN-45C |
256K X 32 MULTI DEVICE SRAM MODULE, 55 ns, SMA64
256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, SMA64
256K X 32 MULTI DEVICE SRAM MODULE, 45 ns, SMA64
|
Cypress Semiconductor, Corp.
|
| CYM26KAH24AV33-10BGC CYM26KAH24AV33-12BGC CYM26KAH |
256K X 24 MULTI DEVICE SRAM MODULE, 10 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
256K X 24 MULTI DEVICE SRAM MODULE, 12 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
Memory 内存
|
Cypress Semiconductor, Corp.
Electronic Theatre Controls, Inc.
|
| EBJ21UE8BDS0-AE-F |
256M X 64 MULTI DEVICE DRAM MODULE, DMA204
|
ELPIDA MEMORY INC
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
