PART |
Description |
Maker |
NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX6504SH NX6504SJ NX6504GK NX6504SI NX6504SK NX650 |
1550 nm InGaAsP MQW DFB laser diode for fiber optic communications. 1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
NEC CEL[California Eastern Labs]
|
ML99213 ML9XX13 |
Optoelectronics - Discontinued Products InGaAsP - MQW - DFB LASER DIODES In GaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NX6307SK |
1310 nm InGaAsP MQW DFB laser diode for 2.5 Gb/s application.
|
NEC
|
NX8316XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
NX6508 |
NECs InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
California Eastern Laboratories
|
NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX6506GK-AZ NX6506 NX6506GH-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
NX6506GH-AZ NX6506GK-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
California Eastern Laboratories
|
NX6414EH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
|
California Eastern Labs Renesas Electronics Corporation
|
NX6509GK-AZ NX6509 NX6509GH-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|