PART |
Description |
Maker |
FDP18N20F FDPF18N20FT |
N-Channel UniFETTM FRFETMOSFET 200V, 18A, 140m N-Channel MOSFET 200V, 18A, 0.14楼? N-Channel MOSFET 200V, 18A, 0.14Ω
|
Fairchild Semiconductor
|
RF1S640SM IRF640 RF1S640 |
N-Channel Power MOSFETs/ 18A/ 150-200V 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
STS1C1S250 |
N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
FQP16N25C FQPF16N25C |
250V N-Channel MOSFET 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET(减振钢板基本\u003d 250V,的Rdson)\u003d 0.075ohm,身份证\u003d 38A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A) HEXFET? Power MOSFET Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A) Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.28ohm,身份证\u003d 7.9A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A) Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 250V,的Rds(on)\u003d 0.435ohm,身份证\u003d 8.0A TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 8A条(丁)|63AB
|
International Rectifier, Corp.
|
18N40 18N40G-TF1-T 18N40G-T47-T 18N40G-TA3-T 18N40 |
18A, 400V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
IRFS244B IRFS244BFP001 |
250V N-Channel B-FET / Substitute of IRFS244 & IRFP244A 250V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|