| PART |
Description |
Maker |
| FQT26N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 5.9AI（四）|的SOT - 223
|
Fairchild Semiconductor, Corp.
|
| BUK481-100AT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|的SOT - 223
|
Cooper Bussmann, Inc.
|
| BFG94T/R |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-223 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一c）|的SOT - 223
|
DB Lectro, Inc.
|
| AMS1117 |
SOT-223 Transistor
|
TAIWAN SHIKE ELECTRONIC HOLDINGS LIMITED
SK Electronics
|
| BCP68-25E6433 |
1 A, 20 V, NPN, Si, POWER TRANSISTOR SOT-223, 4 PIN
|
Infineon Technologies AG
|
| BSP16 |
SOT-223 Package High Voltage Transistor
|
ON Semiconductor
|
| STN3PF06 7515 |
P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET II POWER MOSFET
P-CHANNEL 60V 0.18 OHM 3A SOT-223 STRIPFET II POWER MOSFET
From old datasheet system
P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET⑩ II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| BSP19AT1 BSP20AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| NDT3055J23Z NDT3055NL |
N-Channel Enhancement Mode Field Effect Transistor
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223
|
Fairchild Semiconductor
|
| NTF3055L108 NTF3055L108D NTF3055L108T1 NTF3055L108 |
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 3 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 3.0 A, 60 V, Logic Level N-Channel SOT-223(3A,60V逻辑电平,N通道，SOT-223封装的功率MOSFET)
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223
|
ONSEMI[ON Semiconductor]
|
| STN2NF1007 STN2NF10 |
N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET
|
STMicroelectronics
|
