| PART |
Description |
Maker |
| SLD-2000 |
12 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| S2308 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S6306 |
SiC Schottky Barrier Diode Bare Die
|
Rohm Co., Ltd.
|
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S4002 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4102 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2301-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IRG4CC81KB IRG4CC40RB |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|芯片
IRG4CC81KB IGBT Die in Wafer Form
|
International Rectifier
|
| ELC-660-23-1 |
LED bare chip die
|
Roithner LaserTechnik G...
|
| 5SMY12M1200 |
IGBT-Die
|
The ABB Group
|
| 5SMX12E1273 |
IGBT-Die
|
The ABB Group
|
| 5SMX12M6500 |
IGBT-Die
|
The ABB Group
|
