PART |
Description |
Maker |
NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPT1007 NPT1007-15 |
Gallium Nitride 28V, 200W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
AML1416P4511 |
Gallium Nitride (GaN)
|
Microsemi
|
AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
UF28100V |
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的,推挽式)(镀金多用的DMOS射频硅场效应管(50 28V 1GHz的,推挽式) METAL GATE RF SILICON FET
|
3M Company SEME-LAB[Seme LAB]
|
STK4231V STK4231 |
AF Power Amplifier(Split Power Supply)(100W+100W min, THD=0.08%)
|
SANYO[Sanyo Semicon Device]
|
DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|