| PART |
Description |
Maker |
| 2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| FQPF9N90C FQPF9N90CT FQP9N90C |
N-Channel QFETMOSFET 900V, 8A, 1.4
N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
|
Fairchild Semiconductor
|
| FQA11N90C-F109 |
FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm
|
Fairchild Semiconductor
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| IXCY01N90E |
900 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PLASTIC PACKAGE-3
|
IXYS, Corp.
|
| RFL1N15L RFL1N12L |
1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FQA11N9007 FQA11N90F109 FQA11N90-F109 |
900V N-Channel MOSFET 11.4 A, 900 V, 0.96 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| IXFH16N90 |
HiPerFET Power MOSFETs 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS, Corp.
|
| IRFAF50 IRFAF50PBF IRFAF50-15 |
Simple Drive Requirements
900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS
6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
International Rectifier
|
| 2SK2664 |
3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFETs / HVX-II Series (Three Terminal Type)
|
Shindengen
|
| FMH06N90E |
N-CHANNEL SILICON POWER MOSFET
6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC CO LTD
|
|
