| PART |
Description |
Maker |
| WED3DL644V10BI WED3DL644V7BI WED3DL644V10BC WED3DL |
4MX64 SDRAM
|
WEDC[White Electronic Designs Corporation]
|
| KMM466S424BT |
4Mx64 SDRAM SODIMM(4M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| WED3DG644V100D1-S WED3DG644V100D1I-M WED3DG644VB10 |
32MB - 4Mx64 SDRAM, UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HMS51232M4G-10 HMS51232M4G-12 HMS51232M4G-15 HMS51 |
Synchronous DRAM Module 32Mbyte(4Mx64-Bit), 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd.
\HANBIT
|
| HMD4M64D16E |
32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin 32Mbyte4Mx64）EDO公司模式4K的参考5V的，内存168
|
Hanbit Electronics Co., Ltd.
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| UPD45128441G5-A10BL9JF UPD45128841G5-A10BL9JF UPD4 |
x8 SDRAM
x16 SDRAM
x4 SDRAM x4内存
|
Elpida Memory, Inc.
|
| NT256D64S8HA0G-8B NT256D64S8HA0G NT256D64S8HA0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 16Mx8 SDRAM
184pin Two Bank Unbuffered DDR SDRAM MODULE 184pin两个银行无缓冲DDR SDRAM内存模块
|
NANYA
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| HYB18TC256160AF |
256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM
|
Qimonda AG
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
