| PART |
Description |
Maker |
| UPD5756T6N-E2-A |
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function
|
Renesas Electronics Corporation
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC55V8200FT-12 TC55V8200FT-15 TC55V8200FT-10 |
2,097,152-WORD BY 8-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC83220-0009 |
Single-Chip CMOS LSI for FL (fluorescent) Calculator with Printers
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| KS9210 |
CMOS INTEGRATED CIRCUIT
|
Samsung semiconductor
|
| TB1239BF |
Bi-CMOS Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD5555 UPD5555C UPD5555G2 D5555C |
CMOS Timer
MOS INTEGRATED CIRCUIT
|
NEC Electronics
NEC[NEC]
|
| TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation
Toshiba, Corp.
|
| KIC7SZ04FU-15 |
SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
|
KEC(Korea Electronics)
|
| TB6585FTG |
TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
