| PART |
Description |
Maker |
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| 144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
| GL550 GL551 |
High Speed Infrared Emitting Diode
|
Sharp Electrionic Components
|
| VSMY2850G |
High Speed Infrared Emitting Diodes
|
Vishay Siliconix
|
| SE1103 |
High Speed Infrared Light Emitting Diode
|
NEC Electronics
|
| TSHF5410 |
High Speed Infrared Emitting Diode in T-1 3/4 Package
|
VISAY[Vishay Siliconix]
|
| VSMF2893SLX01 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| VSMG2720-GS18 VSMG2720-GS08 |
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSMF3710-GS18 TSMF3710 TSMF3710-GS08 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
| TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSHG6200 TSHG620007 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| TSFF5210 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Intertechnology,Inc.
|
