PART |
Description |
Maker |
S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics STMicroelectronics
|
IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A ) HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
|
Hamamatsu Photonics K.K.
|
STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics ST Microelectronics
|
1SS302 |
Low forward voltage:VF(3) = 0.9 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ)
|
TY Semiconductor Co., Ltd
|
LA4440 |
6W 2-Channel / Bridge 19W typ Power Amplifier 6W 2-Channel, Bridge 19W typ Power Amplifier From old datasheet system
|
Sanyo Semicon Device
|
STF6N65M2 STU6N65M2 |
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220FP package N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
|
ST Microelectronics
|
STD6N65M2 STB6N65M2 |
Zener-protected N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
|
STMicroelectronics ST Microelectronics
|
7 3X 6X 2X 4 5 4X 501104 501141 501177 501128 5011 |
Serially Interfaced, 8-Digit, LED Display Drivers SCHLAUCHSCHELLE VERZINKT TYP 3X 5ST Inhalt pro Packung: 5 Stk. NiCd/NiMH Battery Fast-Charge Controllers SCHLAUCHSCHELLE VERZINKT TYP 6 5ST Inhalt pro Packung: 5 Stk. SCHLAUCHSCHELLE VERZINKT TYP 2X 5ST Inhalt pro Packung: 5 Stk. SCHLAUCHSCHELLE VERZINKT TYP 4 5ST Inhalt pro Packung: 5 Stk. SCHLAUCHSCHELLE VERZINKT TYP 5 5ST Inhalt pro Packung: 5 Stk. Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits SCHLAUCHSCHELLE ROSTFREI TYP 000 5ST Inhalt pro Packung: 5 Stk. SCHLAUCHSCHELLE ROSTFREI TYP 00 5ST Inhalt pro Packung: 5 Stk. SCHLAUCHSCHELLE ROSTFREI TYP 0X 5ST Inhalt pro Packung: 5 Stk. SCHLAUCHSCHELLE ROSTFREI TYP 2 5ST Inhalt pro Packung: 5 Stk. Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits SCHLAUCHSCHELLE ROSTFREI典型AST Inhalt亲Packung沙头角
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TE Connectivity, Ltd.
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