| PART |
Description |
Maker |
| IRFL210 IRFL210TR |
200V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
|
International Rectifier
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|4A（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
|
International Rectifier, Corp.
Fairchild Semiconductor
IRF[International Rectifier]
|
| FQU12N20L FQD12N20L FQU12N20 FQD12N20LTF FQD12N20L |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| IRHNA597260 2129 IRHNA593260 IRHNA597260PBF |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
35.5 A, 200 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| IRFB23N20D IRFS23N20DTRR IRFSL23N20D IRFS23N20DTRL |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
| IRFP260 IRFP260N IRFP260NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）\u003d 0.04ohm，身份证\u003d 50A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
