| PART |
Description |
Maker |
| CD13003 |
45.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 5 - 25 hFE.
|
Continental Device India Limited
|
| 2SC3625 2SC3560 2SC3561 2SD1410 2SC3559 |
8A; 40W; V(ceo): 400V; NPN transistor. For switching regulation
2A; 20W; V(ceo): 400V; NPN transistor. For switching regulation
6A; 25W; V(ceo): 250V; NPN darlington transistor
3A; 30W; V(ceo): 800V; NPN transistor. For switching regulation
|
TOSHIBA
|
| 2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC2826 |
POWER TRANSISTORS(3.0A,400V,40W)
|
http://
Toshiba Semiconductor
|
| SBF13007 |
36W Bipolar Junction Transistor, 8A Ic, 400V Vceo, 700V Vces
|
SemiWell Semiconductor
|
| HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASI10748 VMB80-28F ALR015 ASI10511 ASI10770 MRF314 |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)) VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10593 HF10-12S |
NPN Silicon RF Power Transistor(Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:4.5 A,Vcbo: 36 V,Vceo: 18 V,Vebo: 4.0 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| BCX55 BCX56 BCX55-16 BCX54 BCX54-10 BCX54-16 BCX56 |
General Purpose Transistors - SOT89; VCEO=60 V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160
NPN Silicon AF Transistors NPN AF硅晶体管
NPN Silicon AF Transistors
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| BCX70H BCW60FN BCW60FF BCW60B BCW60D BCW60 BCX70G |
?SOT23;VCEO=45V?
NPN Silicon AF Transistors NPN AF硅晶体管
|
Infineon Technologies A...
Siemens Semiconductor Group
INFINEON[Infineon Technologies AG]
|
| CN451 CN450 |
General Purpose Transistors designed for Small and Medium Signal Amplification from D.C to Radio Frequencies
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 50 - 150 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 100 - 300 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
