PART |
Description |
Maker |
SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
SIDC07D60F6 SIDC07D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE 20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
RH1JGR |
Fast Recovery Pack: DO-15 SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE: 600V CURRENT: 1.5A
|
Gulf Semiconductor
|
UID4N60 |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
SIDC03D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
SIDC06D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
ES3A ES3B ES3C ES3D ES3G ES3J |
Super Fast Recovery Pack: SMC SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞3.0A SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?.0A
|
Gulf Semiconductor http://
|
CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
IRG4BC30FD1 |
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
IRF[International Rectifier]
|
Q67040S4717 IKW30N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode 低损耗DuoPack:在IGBT的沟槽场终止技术和软,恢复快反平行何快恢复二极 From old datasheet system
|
INFINEON[Infineon Technologies AG]
|