| PART |
Description |
Maker |
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| NTTD2P02R2-D NTTD2P02R2/D |
Power MOSFET -2.4 Amps-20 Volts
Power MOSFET -2.4 Amps, -20 Volts Dual P-Channel Micro8
|
ON Semiconductor
|
| MTD3055VL1 MTD3055VLT4 MTD3055VL MTD3055VL-D |
Power MOSFET 12 Amps, 60 Volts 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 12 Amps, 60 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| NTMS10P02R2 NTMS10P02 |
Power MOSFET -10 Amps, -20 Volts N-Channel Enhancement Mode Single SO-8 Package(-10A, -20 V，单N通道，增强模式，SO-8封装的功率MOSFET)
Power MOSFET -10 Amps, -20 Volts P−Channel Enhancement−Mode Single SO−8 Package
HDTMOS3e Single SO-8
|
ONSEMI[ON Semiconductor]
|
| 4N90L-TA3-T 4N90G-TA3-T |
4 Amps, 900 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| 2N7002L-AE2-R 2N7002G-AE2-R |
0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MMSF3P02HD-D |
Power MOSFET 3 Amps, 20 Volts P-Channel SO-8
|
ON Semiconductor
|
| UT40N03 UT40N03G-TM3-T UT40N03G-TN3-R UT40N03L-TN3 |
40 Amps, 30 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MMSF5N03HD-D |
Power MOSFET 5 Amps, 30 Volts N-Channel SO-8
|
ON Semiconductor
|
