| PART |
Description |
Maker |
| BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| 2SC4258 |
10 A, 500 V, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| 2SC3970 2SC3970A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 1.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
Panasonic Corporation
Panasonic Semiconductor
|
| BUJ301A |
Silicon Diffused Power Transistor 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| SS9013 |
NPN epitaxial silicon transisitor 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| BC487 BC487B BC487G BC487BRL1 BC487BG |
High Current Transistors NPN Silicon
500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| BSX20CSM BSX20CSM-JQR-AG4 |
500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Bipolar NPN Device in a Hermetically sealed LCC1
|
SEMELAB LTD
Seme LAB
|
| MMPQ2222A FFB2222A FFB2222A_1 FMB2222A MMPQ2222ANL |
500 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Multi-Chip General Purpose Amplifier
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
