PART |
Description |
Maker |
ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF10100 |
0.5-12 GHz Low Noise Gallium Arsenide FET(0.5-12 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
ML4963-138 ML4971-138 ML4941-111 ML4941-118 ML4941 |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE 50 GHz - 60 GHz, GALLIUM ARSENIDE, GUNN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
ATF-25570 |
0.5-10 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-13736 ATF-13736-STR ATF-13736-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-26836-STR |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard...
|
NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
ATF13284 ATF13284STR ATF13284TR1 |
1-16 GHz Low Noise Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
ATF13284TR2 ATF-13284 ATF-13284-STR ATF-13284-TR1 |
1-16 GHz Low Noise Gallium Arsenide FET 1-16 GHz的低噪声砷化镓场效应
|
Agilent(Hewlett-Packard... HP[Agilent(Hewlett-Packard)]
|
MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|