| PART |
Description |
Maker |
| IRFS4020PBF IRFS4020PBF-15 |
Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| IDP08E65D1 |
High Power RF LDMOS FETs
Temperature stable behaviour of key parameters
|
Infineon Technologies AG
Infineon Technologies A...
|
| SFM-2A-1 |
MESFET HIGH IP3 MIXER SURFACE OPTIMIZED BANDWIDTH
OPTIMIZED BANDWIDTH SURFACE MOUNT MODEL
|
SYNERGY MICROWAVE CORPORATION
ETC[ETC]
List of Unclassifed Manufacturers
|
| TTP229 |
16 Key / 8 key touch detection IC
|
TONTEK
|
| 0480062111 48006-2111 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Brass Latch, Blue Housing, Phosphor Bronze Terminals, Single Key, with Beveled Metal Pins,2.5V Voltage Key
MOLEX Connector
|
Molex Electronics Ltd.
|
| RLDH808-1200-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI5484DU-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
| SI4362BDY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
Vishay Siliconix
|
| SI3865BDVRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-108TC |
Nominal Operating Parameters
|
RF Micro Devices
|
