| PART |
Description |
Maker |
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| 154L80AM 200HFR100FV 45LF120 LR80A LR80M |
150 A, 800 V, SILICON, RECTIFIER DIODE
200 A, 1000 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
DIODE 150 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode
DIODE 150 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AC, Rectifier Diode
|
Vishay Semiconductors
|
| 6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
|
Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
|
| CM150DU-24H |
Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| BSM15GP120DL BSM150GAL120DL |
15 A, 1200 V, N-CHANNEL IGBT ECONOPIM
150 A, 1200 V, N-CHANNEL IGBT
|
|
| PM150RL1A120 |
Three Phase IGBT Inverter Brake 150 Amperes/1200 Volts
|
Powerex Power Semiconductor...
|
| CM150RX-24S |
Six IGBT Brake NX-Series Module 150 Amperes/1200 Volts
|
Powerex Power Semiconductors
Powerex Power Semiconductor...
|
| CM150EXS-24S |
Chopper IGBT NX-Series Module 150 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| C-DWEP9-12 T-DWEP9-12 W-DWEP9-12 C-DWEP49-12 T-DWE |
12 A, 1200 V, SILICON, RECTIFIER DIODE DIE-1
12 A, 1200 V, SILICON, RECTIFIER DIODE WAFER
77 A, 1200 V, SILICON, RECTIFIER DIODE
30 A, 1000 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp.
IXYS CORP
|
| 2N2505 |
Silicon Controlled Rectifier; Package: TO-93; IT (Av) (A): 150; VTM (V): 1.7; VGT (V): 3; IGT (µA): 150; Vrrm (V): 200; 235.5 A, SCR, TO-93
|
Microsemi, Corp.
|
|
