| PART |
Description |
Maker |
| TC58NVG6T2FTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| TC58NYG1S3EBAI5 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NVG0S3AFT00 |
1 GBit CMOS NAND EPROM
|
Toshiba
|
| NAND08GW4B2CN6E NAND08G-BXC NAND08GR3B2C NAND08GR3 |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
http://
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| AM27X128 AM27X128-120JC AM27X128-120JI AM27X128-12 |
CMOS Quad 2-Input NAND Schmitt Triggers 14-CDIP -55 to 125 16K X 8 OTPROM, 90 ns, PDIP28
CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 128千比特（16亩8位）的CMOS ExpressROM装置
CMOS Quad 2-Input NAND Schmitt Triggers 14-SOIC -55 to 125 16K X 8 OTPROM, 150 ns, PDIP28
CAPACITOR .0033UF UV BOX TYPE 16K X 8 OTPROM, 150 ns, PQCC32
CMOS Quad 2-Input NAND Schmitt Triggers 14-TSSOP -55 to 125
128 Kilobit (16 K x 8-Bit) CMOS ExpressROM Device
|
SPANSION LLC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| NAND16GW3C4B NAND08GW3C4BN1E NAND16GW3C4BN1E NAND0 |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
