PART |
Description |
Maker |
CRA2010 CRA2512 CRA2510-FZ-R017ELF CRA2510-GZ-R017 |
CRA2010/CRA2512 - High Power Current Sense Chip Resistor
|
Bourns Electronic Solutions Bourns Electronic Solut...
|
CRA2512 |
(CRA2010 / CRA2512) High Power Current Sense Chip Resistor
|
Bourns
|
RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag 80m惟, 1.5A/0.6A High-Side Power Switches with Flag 80m楼?, 1.5A/0.6A High-Side Power Switches with Flag 80mヘ, 1.5A/0.6A High-Side Power Switches with Flag User Programmable Micro-Power Voltage Detectors
|
Richtek Technology Corporation
|
RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system 5.1-5.9 GHz U-NII Power Amplifier The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126 High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR HIGH POWER NPN TRANSISTOR From old datasheet system HIGH VOLTAGE NPN POWER TRANSISTOR 8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
BUX45 |
HIGH VOLTAGE HIGH POWER SILICON NPN POWER SWITCHING TRANSISTORS
|
General Electric Solid State ETC[ETC] List of Unclassifed Manufacturers
|
MT5355-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
|
ON Semiconductor
|
CGD1046HI |
1 GHz, 27 dB gain GaAs high output power doubler 40 MHz - 1003 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|