| PART |
Description |
Maker |
| HM2101B |
High power MOS tube, IGBT tube gate driver chip
|
Shenzhen Huazhimei Semi...
|
| TLP70107 TLP701 |
IGBT/Power MOS FET gate drive
|
Toshiba Semiconductor
|
| PS9402 PS9402-E3-AX PS9402-V-AX PS9402-V-E3-AX |
2.5 A OUTPUT CURRENT, HIGH CMR, IGBT, POWER MOS FET GATE DRIVE, 16-PIN SSOP PHOTOCOUPLER
|
California Eastern Labs
|
| TLP350 |
Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter
Photocouplers - Photo-IC Output
|
Toshiba Semiconductor
|
| IP2030 |
30V MCT/IGBT Gate Driver(MOS???纭??浣??/缁????????浣???ㄩ┍?ㄥ?)
|
Intersil Corporation
|
| APT5010JLC |
POWER MOS VI 500V 44A 0.100 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APT50M50JLC APT5010JLC |
POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT40GP60JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
