| PART |
Description |
Maker |
| EG3014 |
Power MOS tube / IGBT gate driver chip
|
EGmicro
|
| TLP70107 TLP701 |
IGBT/Power MOS FET gate drive
|
Toshiba Semiconductor
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| APT5015BLC |
POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|
| APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|
| APT30GP60BDQ1 APT30GP60BDQ1G |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT15GP90BDQ1G APT15GP90BDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT32GU30K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP90B2DQ2 APT40GP90B2DQ2G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT80GP60JDQ3 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
