| PART |
Description |
Maker |
| NE3512S02-T1D-A NE3512S02 NE3512S02-T1D NE3512S02- |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE350184C NE350184C-T1A NE350184C-T1 NE350184C-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs
CEL
|
| NJ16 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| UT4404-15 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
|
Unisonic Technologies
|
| PJ99 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| BF246 BF246C Q62702-F393 BF246A BF246B Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
SIEMENS[Siemens Semiconductor Group]
|
| BC264 |
N Channel Junction Field Effect Transistors
|
Micro Electronics
|
| NJ1800D |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| J111 J112 J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| 2N5457 2N5458 |
SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| SMPJ112 SMPJ113 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| IF1331 |
N-Channel Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
