| PART |
Description |
Maker |
| HYMP125P72CP4L-C4 HYMP41GP72CNP4L-C4 HYMP41GP72CNP |
240pin DDR2 VLP Registered DIMMs
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| HYMP125R72M4-E3/C4 HYMP125R72MP4-E3/C4 HYMP512R724 |
Versatile Miniature Switch, High Performance 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| MT18VDDF12872HY-335XX MT18VDDF12872HG-265 MT18VDDF |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
DDR SDRAM SODIMM
|
Micron Technology
|
| M1Y1G64TU8HA0B-3C M1U1G64TU8HA0F-3C M1U1G64TU8HA0B |
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 GREEN, DIMM-240
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 DIMM-240
|
Nanya Technology, Corp.
|
| HYS72T128001HFN-3.7-A |
128M X 72 DDR DRAM MODULE, DMA240
|
INFINEON TECHNOLOGIES AG
|
| NT1GT72U4PB0BV-25D |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
NANYA TECHNOLOGY CORP
|
| EBJ10EE8BAFA-AG-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
| EBJ10RD4BAFA-AG-E EBJ10RD4BAFA-DJ-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V8274128N24SXSG-A1 |
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Mosel Vitelic, Corp.
|
|
