PART |
Description |
Maker |
AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30 64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22 256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22 1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22 128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18 64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
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A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
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AMIC Technology
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M27V101-150K6TR M27V101-100F6TR |
128K X 8 OTPROM, 150 ns, PQCC32 128K X 8 UVPROM, 100 ns, CDIP32
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STMICROELECTRONICS
|
DS1345YL-70-IND DS1345YL-100IND |
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34 128K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDSO34 LOW PROFILE, SMT-34 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34
|
Maxim Integrated Products, Inc.
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CY62128V CY62128V18 CY62128V18L-200SC CY62128V18L- |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 200 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 100 ns, PDSO32 SWITCH DETECT PB SPST RT ANG .1A
|
CYPRESS[Cypress Semiconductor] Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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A43L8316 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
A43L8316AV-7 A43L8316A A43L8316AV A43L8316AV-5 A43 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
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MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万(256K × 8/128K × 16)位快闪记忆体(V的电源电56K × 8/128K × 16闪速存储器 2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
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Fujitsu, Ltd. Fujitsu Limited
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