PART |
Description |
Maker |
RJK5032DPD |
500V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK5014DPP-E0 |
500V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET MOS Field Effect Transistor N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
2SK1280 |
N-Channel MOS-FET(500V, 0.5Ohm, 18A, 150W) N-Channel MOS-FET(500V 0.5Ohm 18A 150W)
|
FUJI[Fuji Electric]
|
2SK1273 2SK1273-T2 2SK1273-T1 |
N-channel power MOS FET N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
APT50M50JVFR |
POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5028SVR |
POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5017BVFR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5017BVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT50M85JVFR |
POWER MOS V 500V 50A 0.085 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT50M50 APT50M50PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
APT50M50JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
|
Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|