PART |
Description |
Maker |
FDMS3660AS |
PowerTrench? Power Stage
|
Fairchild Semiconductor
|
FDMS3600S |
PowerTrench? Power Stage 25 V Asymmetric Dual N-Channel MOSFET
|
Fairchild Semiconductor
|
RA13H4047M RA13H4047M-01 RA13H4047M-E01 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V 2 Stage Amp. For MOBILE RADIO MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
IRPT4052 |
Integrated Power Stage for 5.5kW Motor Drives(5.5kW 马达驱动器的集成功率单元) 集成功率级的功率5.5kw电机驱动器(功率5.5kw马达驱动器的集成功率单元 Integrated Power Stage for 7.5 hp Motor Drives
|
International Rectifier, Corp.
|
FDP844210 FDP8442F085 FDP8442-F085 |
N-Channel PowerTrench? MOSFET 40V, 80A, 3.1mΩ 23 A, 40 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel PowerTrench MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0 |
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 Package N-Channel PowerTrench MOSFET, 60V, 60A, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package N-Channel PowerTrench MOSFET 60V/ 60A/ 14.6m N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз
|
FAIRCHILD[Fairchild Semiconductor]
|
NCP1652A NCP1652DWR2G NCP1652ADR2G NCP1652DR2G NCP |
High-Efficiency Single Stage Power Factor Correction and Step-Down Controller High Efficiency Single Stage Power Factor Correction and Step-down Controller POWER FACTOR CONTROLLER, 250 kHz SWITCHING FREQ-MAX, PDSO16 High-Efficiency Single Stage Power Factor Correction and Step-Down Controller
|
ON Semiconductor
|
FDD044AN03 FDD044AN03L FDU044AN03L |
VARISTOR STD 250VRMS 3225 SMD 35 A, 30 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 30V N-Channel PowerTrench? MOSFET 30V N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
2MP04-096 2MP04-096-15 2MP04-096-10 2MP04-096-12 2 |
Specifications The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
2SC4793 E000997 |
NPN EPITAXIAL TYPE (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS From old datasheet system
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TOSHIBA[Toshiba Semiconductor]
|