PART |
Description |
Maker |
2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors Bipolar Junction Transistor SILICON PNP TRANSISTOR
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New Jersey Semi-Conductor Products, Inc. New Jersey Semiconductors New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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MRF5812 MRF5812G |
Bipolar Junction Transistor
|
Advanced Power Technology
|
S13003ADL |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
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S13005A |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
JANSM2N3057A |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
JANSM2N3019S |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
2N3765U4 2N3764U4 JANS2N3764U4 JANSD2N3764U4 JAN2N |
PNP Transistor BJT( BiPolar Junction Transistor)
|
Microsemi
|
JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JAN |
BJT( BiPolar Junction Transistor) PNP Transistor
|
Microsemi
|
SBF13005 |
30W Bipolar Junction Transistor, 4A Ic, 400V Vceo, 700V Vces High Voltage Fast-Switching NPN Power Transistor
|
SemiWell Semiconductor
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30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
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MDE Semiconductor
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BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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IRF[International Rectifier]
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