| PART |
Description |
Maker |
| PP300R120 |
Integrated IGBT Power Structures
|
ETC
|
| CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FZ1200R17KE3 |
IGBT-Wechselrichter / IGBT-inverter
IGBT Power Module
|
eupec GmbH
|
| FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module
IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
| RM500DZ RM500DZ-24 RM500DZ-2H RM500DZ-H RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGD622 |
IGBT(integrated FRD)
|
Sanken
|
| MGD623N |
IGBT(integrated FRD)
|
Sanken
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
