| PART |
Description |
Maker |
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| AM3455P |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| AM3434N |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| MMBF2202PT1G |
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| AM2370N |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| MMBF2201NT1G |
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
