| PART |
Description |
Maker |
| MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| T1G4003532-FS-15 |
35W, 32V, DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| NPT2020 NPT2020-SMB2 NPT2020-15 |
GaN Wideband Transistor 48 V, 50 W
|
M/A-COM Technology Solu...
|
| MAGX-000912-500L00 MAGX-000912-SB3PPR |
GaN on SiC Depletion-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
