| PART |
Description |
Maker |
| 1SS315TPH3F |
UHF Band Mixer Applications
|
Toshiba Semiconductor
|
| 1SS154 |
DIODE (UHF~S BAND MIXER/DETECTOR APPLICATIONS)
|
Toshiba Semiconductor
|
| SBL-804 SBL SBL-121 SBL-122 SBL-221 SBL-801 SBL-80 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
C to Millimeter Band Mixer/ Detector/ Modulator Applications
C to Millimeter Band Mixer, Detector, Modulator Applications C至毫米波段混频器，检测器，调制器的应
|
http://
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| 1SS315 |
RES 36.0 OHM 1/20W 1% 0201 SMD
DIODE (UHF BAND MIXER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SC3777 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BAT29 |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| BAT68-03WE6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
SIEMENS A G
|
| BAT68-04E6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
INFINEON TECHNOLOGIES AG
|
