| PART |
Description |
Maker |
| 2SC4181A |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| 2SC3518-Z |
NPN Silicon Epitaxia
|
Guangdong Kexin Industrial Co.,Ltd
|
| CMZB18 CMZB20 CMZB27 CMZB12 CMZB15 CMZB22 CMZB24 C |
TOSHIBA Zener Diode Silicon Diffused Type
|
Toshiba Semiconductor
|
| TVR1B TVR1G TVR1J |
TOSHIBA Fast Recovery Diode Silicon Diffused Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS394-14 |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
|
Toshiba Semiconductor
|
| JDV4P08U |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV273 |
TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV24507 1SV245 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| 1SV239-14 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
|
Toshiba Semiconductor
|
| JDV2S10S |
From old datasheet system
TOSHIBA DIODE Silicon Epitaxial Planar Type
|
TOSHIBA[Toshiba Semiconductor]
|
