| PART |
Description |
Maker |
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| RPM7237-H8R RPM7237-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| RPM7140-H8R RPM7140-H4R RPM7140-H9R RPM7140-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| STW9Q14B |
Lead Frame type LED PKG size:5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| B5B-435-30 |
B5B-435-30 is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-435-TL |
B5B-435-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| HA11567MP |
V(cc): 7.0V; 450mW; chroma processor and H/V system for digital VCR (PAL)
|
Hitachi Semiconductor
|
