| PART |
Description |
Maker |
| 2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss.
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CP-40-1 |
40-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 6 x 6 mm Body, Very Thin Quad
|
Analog Devices
|
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RPM7137-H4R RPM7137-H9R RPM7137-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| STW9Q14C |
Lead Frame type LEd PKG size:5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| STW8Q14BE |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| B5B-435-30 |
B5B-435-30 is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| RPM6937-V4 RPM6938-V4 |
Lead Frame Remote Control Receiver Modules (5V with superior anti-nois characteristics Type)
|
ROHM
|
| B3B-443-B525 |
B3B-443-B525 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
