| PART |
Description |
Maker |
| 2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss.
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| CP-8-9 |
8-Lead Lead Frame Chip Scale Package [LFCSP_VD] 3 x 3 mm Body, Very Thin, Dual Lead
|
Analog Devices
|
| CP-40-1 |
40-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 6 x 6 mm Body, Very Thin Quad
|
Analog Devices
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| TCF3A30324093 TCF3A203240B2 TCF3A30324091 TCF3A203 |
Lead Frame for Temperature Sensing/Compensation
|
Thinking Electronic Industrial Co.,Ltd
Thinking Electronic Industr...
|
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| SSC-STW0Q2PA |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| B5B-437-CV |
B5B-437-CV is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-B505 |
B5B-433-B505 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
