| PART |
Description |
Maker |
| 2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE.
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| CP-8-9 |
8-Lead Lead Frame Chip Scale Package [LFCSP_VD] 3 x 3 mm Body, Very Thin, Dual Lead
|
Analog Devices
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| 16-216/T3D-AQ1R2TY/3T T3D-AQ1R2TY13 |
The 16-216 SMD LED is much smaller than lead frame type components
|
Everlight Electronics Co., Ltd
|
| B5B-437-CV |
B5B-437-CV is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-900-8 |
B5B-900-8 is a GaAlAs LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-435-30S |
B5B-435-30S is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-014 |
B5B-433-014 is a GaP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| RX3A-869.50-10 TX3H-869.50-10 |
UHF Wide Band FM 450mW Transmitter
|
Radiometrix Ltd
|
| AD625SD883B |
-18V; 450mW; programmable gain instrumentation amplifier
|
Analog Devices
|
