| PART |
Description |
Maker |
| 2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE.
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| CP-40-1 |
40-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 6 x 6 mm Body, Very Thin Quad
|
Analog Devices
|
| STW8Q14BE |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| B5B-434-TY |
B5B-434-TY is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-445-TL |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-435-30S |
B5B-435-30S is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-B505 |
B5B-433-B505 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
