| PART |
Description |
Maker |
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CZT7090L |
SMD Bipolar Power Transistor PNP Low VCE(SAT)
SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTO
|
CENTRAL[Central Semiconductor Corp]
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| RPM7138-H8R RPM7138-H4R RPM7138-H9R RPM7138-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| AOD421 |
P-Channel Enhancement Mode Field Effect Transisto
|
Alpha & Omega Semiconductors
|
| B5B-437-CV |
B5B-437-CV is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-20 |
B5B-433-20 is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-445-TL |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-443-B525 |
B3B-443-B525 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| RX3A-869.50-10 TX3H-869.50-10 |
UHF Wide Band FM 450mW Transmitter
|
Radiometrix Ltd
|
| HA11567MP |
V(cc): 7.0V; 450mW; chroma processor and H/V system for digital VCR (PAL)
|
Hitachi Semiconductor
|
