| PART |
Description |
Maker |
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RPM7238-H8R RPM7238-H4R RPM7238-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| RPM7140-H8R RPM7140-H4R RPM7140-H9R RPM7140-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| SSC-STW0Q2PA |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| B5B-437-IX |
B5B-437-IX is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-445-30S |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| PCL851 PCL85 |
TRIODE-PENTODE FOR USE AS FRAME OUTPUT TUBE AND FRAME OSCILLATOR
|
NXP Semiconductors
|
| AD7569AN |
-0.3 to 7V; 450mW; LC2MOS complete, 8-bit analog I/O system
|
Analog Devices
|
| AD7450BM |
0.3-7V; 450mW; differential input, 1MSPS 12-bit ADC
|
Analog Devices
|
