| PART |
Description |
Maker |
| 2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE.
|
Isahaya Electronics Corporation
|
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| CP-40-1 |
40-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 6 x 6 mm Body, Very Thin Quad
|
Analog Devices
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| RPM7240-H8R RPM7240-H4R RPM7240-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| RPM7237-H8R RPM7237-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| STW8Q14C |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| STW8Q14BE |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| B3B-443-B525 |
B3B-443-B525 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-435-30S |
B5B-435-30S is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-014 |
B5B-433-014 is a GaP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
