| PART |
Description |
Maker |
| 2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss.
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| TCF3A30324093 TCF3A203240B2 TCF3A30324091 TCF3A203 |
Lead Frame for Temperature Sensing/Compensation
|
Thinking Electronic Industrial Co.,Ltd
Thinking Electronic Industr...
|
| RPM7240-H8R RPM7240-H4R RPM7240-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| RPM7237-H8R RPM7237-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| RPM7238-H8R RPM7238-H4R RPM7238-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| STW8Q14C |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| B3B-445-30S |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-445-TL |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-443-B525 |
B3B-443-B525 is a InGaN LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| 2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398
SMALL-SIGNAL TRANSISTOR
|
Isahaya Electronics Corporation
|
