| PART |
Description |
Maker |
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CP-8-9 |
8-Lead Lead Frame Chip Scale Package [LFCSP_VD] 3 x 3 mm Body, Very Thin, Dual Lead
|
Analog Devices
|
| STW9Q14C |
Lead Frame type LEd PKG size:5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| STW8Q14C |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| STW9Q14B |
Lead Frame type LED PKG size:5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| MFE960 MFE990 |
N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTO
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| RPM6937-V4 RPM6938-V4 |
Lead Frame Remote Control Receiver Modules (5V with superior anti-nois characteristics Type)
|
ROHM
|
| B5B-435-30S |
B5B-435-30S is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-433-014 |
B5B-433-014 is a GaP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| AD7450BM |
0.3-7V; 450mW; differential input, 1MSPS 12-bit ADC
|
Analog Devices
|
