| PART |
Description |
Maker |
| 2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss.
|
Isahaya Electronics Corporation
|
| 2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CHT9013PT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| RPM7238-H8R RPM7238-H4R RPM7238-H9R |
Lead Frame Remote Control Receiver Modules (3V Type)
|
ROHM
|
| STW8Q14C |
Lead Frame type LED PKG size: 5.6*3.0 thickness 0.75mm
|
Seoul Semiconductor
|
| B5B-435-30 |
B5B-435-30 is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-434-TY |
B5B-434-TY is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| UPC1350C |
450mW AF Power Amplifier
|
NEC Electronics
|
