| PART |
Description |
Maker |
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CHT9013PT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| BFP540FESD |
NPN Silicon RF Transisto NPN硅射频Transisto
|
INFINEON[Infineon Technologies AG]
|
| STW9Q14B |
Lead Frame type LED PKG size:5.6*3.0 thickness 0.9mm
|
Seoul Semiconductor
|
| B5B-435-TL |
B5B-435-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B5B-434-TY |
B5B-434-TY is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| PCL851 PCL85 |
TRIODE-PENTODE FOR USE AS FRAME OUTPUT TUBE AND FRAME OSCILLATOR
|
NXP Semiconductors
|
| UPC1350C |
450mW AF Power Amplifier
|
NEC Electronics
|
| AD625SD883B |
-18V; 450mW; programmable gain instrumentation amplifier
|
Analog Devices
|
| AD7569AN |
-0.3 to 7V; 450mW; LC2MOS complete, 8-bit analog I/O system
|
Analog Devices
|
