| PART |
Description |
Maker |
| 2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE.
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| 2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282
FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| CHT5338ZPT |
NPN Silicon Transisto r
|
Chenmko Enterprise Co. Ltd.
|
| RPM7138-H8R RPM7138-H4R RPM7138-H9R RPM7138-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| RPM7137-H4R RPM7137-H9R RPM7137-V4R |
Lead Frame Remote Control Receiver Modules (5V Type)
|
ROHM
|
| 16-216/T3D-AQ1R2TY/3T T3D-AQ1R2TY13 |
The 16-216 SMD LED is much smaller than lead frame type components
|
Everlight Electronics Co., Ltd
|
| B5B-900-8 |
B5B-900-8 is a GaAlAs LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| B3B-445-TL |
B3B-445-TL is a AlGaInP LED mounted on a lead frame with a clear epoxy lens
|
Roithner LaserTechnik G...
|
| PCL851 PCL85 |
TRIODE-PENTODE FOR USE AS FRAME OUTPUT TUBE AND FRAME OSCILLATOR
|
NXP Semiconductors
|
| HA11567MP |
V(cc): 7.0V; 450mW; chroma processor and H/V system for digital VCR (PAL)
|
Hitachi Semiconductor
|
