| PART |
Description |
Maker |
| NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
| NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| D1053 D1053UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(50W-28V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应50W-28V-1GHz,推挽) 金镀金属多功能硅的DMOS射频场效应管50 28V 1GHz的，推挽式）（镀金多用的DMOS射频硅场效应管（50 28V 1GHz的，推挽式）
METAL GATE RF SILICON FET
|
3M Company
SEME-LAB[Seme LAB]
|
| L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
From old datasheet system
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc]
ON Semi
|
