| PART |
Description |
Maker |
| S25FL127S |
128 Mbit (16 Mbyte) MirrorBit? Flash Non-Volatile Memory CMOS 3.0 Volt Core
|
SPANSION
|
| SMS128FF SMS128FFA5E SMS512FFA5E SMS064FFA5E SMS06 |
64 MByte, 128 MByte, 256 MByte 512 MByte and 1 GByte, 3.3V Supply Secure Digital垄芒 Card
64 MByte, 128 MByte, 256 MByte 512 MByte and 1 GByte, 3.3V Supply Secure Digital Card
64 MByte, 128 MByte, 256 MByte 512 MByte and 1 GByte, 3.3V Supply Secure Digital?/a> Card
|
Numonyx B.V
|
| HB28E016MM2 HB28D064MM2 HB28D032MM2 |
Multi Media Cards
MultiMediaCard 16 Mbyte/32 Mbyte/64 Mbyte/128 MByte
|
http://
Hitachi Semiconductor
Hitachi,Ltd.
|
| S29GL01GP S29GL-P12 S29GL01GP11TFIR20 S29GL256P90T |
1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
MirrorBit? Flash Family
MirrorBit? Flash Family
|
SPANSION
|
| HB28D096C6 HB28D032C6 |
CompactFlash?/a> 96 MByte/32 MByte
Compact Flash
|
Hitachi Semiconductor
|
| S79FL256S |
256 Mbit (32 MB)/512 Mbit (64 MB), 3 V, Dual-Quad SPI Flash
|
Cypress Semiconductor
|
| M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
| M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M48T512Y10 M48T512V-70PM1 M48T512Y-70PM1 M48T512V- |
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
| SST27SF020-70-3C-PH |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST
|
