| PART |
Description |
Maker |
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
| STW57N65M5-4 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in a TO247-4 package
|
ST Microelectronics
|
| STL31N65M5 |
N-channel 650 V, 0.135 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
| STW54NM65ND |
N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package
|
ST Microelectronics
|
| STF31N65M5 STP31N65M5 STFI31N65M5 STB31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in I2PAKFP package
N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in D2PAK package
|
STMicroelectronics
ST Microelectronics
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| STB8N65M5 STI8N65M5 STF8N65M5 |
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in D2PAK
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in I2PAK
N-channel 650 V, 0.56 Ohm, 7 A MDmesh(TM) V Power MOSFET in TO-220FP
|
ST Microelectronics
|
| STW57N65M5-4 |
N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package
|
STMicroelectronics
|
| STY145N65M5 |
N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh V Power MOSFET in Max247 package
|
STMicroelectronics
|
