PART |
Description |
Maker |
NPT25100 |
Gallium Nitride 28V, 125W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPTB00025 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
AML811P5012 |
Gallium Nitride (GaN)
|
Microsemi
|
NPT2018 NPT2018-15 |
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Industry Standard Plastic Package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
D2084UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-900MHz)(镀金多用DMOS射频硅场效应100W-28V-900MHz)) 金镀金属多功能硅的DMOS射频场效应管(功100W - 28V 900MHz时)(镀金多用的DMOS射频硅场效应管(功率100W - 28V 900MHz的) TetraFET 100W - 28V - 900MHz
|
Sanyo Electric Co., Ltd. TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D1023UK D1023 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时,单端)(镀金多用的DMOS射频硅场效应管(60 28V的,500MHz的单端式))
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited Microsemi, Corp.
|
L680 DGSK8-025A DGS3-025AS DGS4-025A |
Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC Gallium Arsenide Schottky Rectifier 5.4 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp. IXYS[IXYS Corporation]
|
RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
MGRB1018_D ON1882 MGRB1018 |
Power Manager Gallium Arsenide Power Rectifier From old datasheet system GALLIUM ARSENIDE RECTIFIER 10 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|