| PART |
Description |
Maker |
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| SPP47N10 SPB47N10 SPI47N10 |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| AM2317P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2319P |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| AM1331P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM1535CE |
Low rDS(on) provides higher efficiency and extends battery life
|
Analog Power
|
| AM2370N |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| SPD07N20 |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 7.0A, NL
|
Infineon
|
