| PART |
Description |
Maker |
| STL23NM50N |
N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
|
STMicroelectronics
|
| STD3PK50Z |
P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH Power MOSFET in a DPAK package
|
STMicroelectronics
|
| STI14NM50N STP14NM50N STF14NM50N STD14NM50N STB14N |
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh?/a> II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
N-channel 500 V, 0.28 Ω typ., 12 A MDmesh?II Power MOSFET in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
|
STMicroelectronics
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| UMA8.0A UMA8.0CA UMA85CA UMA60A UMA9.0CA UMA7.5CA |
ULTRAMITE SURFACE MOUNT 500 WATT TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 V
|
http://
MICROSEMI[Microsemi Corporation]
|
| SA70A SA15A SA90A SA40A SA150CA SA6.5CA SA5.0CA SA |
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
55SS Series Series Unipolar Hall-Effect Digital Position Sensor
Ceramic Multilayer Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:1206; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System
; Capacitance:2200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:1000V; Dielectric Characteristic:X7R; Package/Case:1206; Series:VJ
RES 412 OHM 1/10W .5% 0805 SMD
SENSOR DI-MAG SPEED
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
Electronics Industry Public Company Limited
Micro Commercial Compon...
|
| PPF440M |
N Channel MOSFET; Package: TO-254; ID (A): 5; RDS(on) (Ohms): 0.85; PD (W): 125; BVDSS (V): 500; Rq: 1; 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| 2SC3356 |
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz
|
TY Semiconductor Co., Ltd
|
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