| PART |
Description |
Maker |
| IRFB4019 IRFB4019PBF |
Key Parameters Optimized for Class-D Audio
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
| IRFB4212 IRFB4212PBF |
Key parameters optimized for Class-D audio amplifier applications
Key parameters optimized for Class-D audio amplifier applications
|
Kersemi Electronic Co., Ltd...
Kersemi Electronic Co.,...
|
| IRFB5620PBF IRFB5620PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| 87636-2102 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Black Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
| 87636-2002 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Beige Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
| MC88A |
8 TUNES 8 KEY WITH SCAN KEY
|
ETC[ETC]
|
| RLDB808-500-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI2303BDSRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-109 |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI4483EDY_RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI4856ADY-RC |
R-C Thermal Model Parameters
|
VAISH[Vaishali Semiconductor]
|
| CFH800 |
Typical Common Source S - Parameters
|
Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
|
