| PART |
Description |
Maker |
| Q62702-A1234 |
Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| BAS70-02W |
SENSOR VACUUM GAGE 1PSID
Silicon Schottky Diode
Schottky Diodes - Silicon AF Schottky diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| ZHCS1006 ZHCS1006TA |
SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT?/a>
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ??uperBAT??/td>
| SOT-23
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT
SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE B>SuperBAT
DIODE SCHOTTKY SOT-23 肖特基二极管采用SOT - 23
High Current Schottky Diode
|
Fairchild Semiconductor
Zetex Semiconductors
Zetex Semiconductor PLC
|
| 1N4748A 1N4732A 1N4758A 1N4745A 1N4754A 1N4744A 1N |
Silicon Power Z-Diode for Voltage Stabilization(稳定电压22V，稳定电1.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电2V的，稳定电流一十一点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.9V，稳定电4mA的硅功率齐纳二极 硅功Z -二极管的电压稳定（稳定电压均.9V，稳定电流六十四毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压16V，稳定电5.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电6V的稳定电流一十五点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压9.1V，稳定电8mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.1V，稳定电8毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压12V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的稳定电压12V的稳定电压，稳定电流21毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压75V，稳定电.3mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电5V的，稳定电流三点三毫安的硅功率齐纳二极管
Silicon Power Z-Diodes 硅功率Z -二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压13V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电3V的，稳定电流十九毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压20V，稳定电2.5mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电0V的，稳定电流十二点五毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压8.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电流三一毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压6.2V，稳定电1mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.2V，稳定电1毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压3.6V，稳定电9mA的硅功率齐纳二极 硅功率Z -二极管的电压稳定（稳定电.6V的稳定电9毫安的硅功率齐纳二极管）
Silicon Power Z-Diode for Voltage Stabilization(稳定电压4.7V，稳定电3mA的硅功率齐纳二极
Silicon Power Z-Diode for Voltage Stabilization(稳定电压5.1V，稳定电9mA的硅功率齐纳二极
From old datasheet system
Silicon Power Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| BAS70 BAS4 BAS40 BAS70-05 BSA40 BAS70-04 BAS70-06 |
RESISTOR,SMD1206,160K,1/4W,5%
Schottky Rectifier
SCHOTTKY arraySERIES 0.2 A, 70 V, SILICON, SIGNAL DIODE
SCHOTTKY array⑩ SERIES
SCHOTTKY ARRAY⒙ SERIES
SCHOTTKY array SERIES
SCHOTTKY array?/a> SERIES
Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:50VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:16000uF RoHS Compliant: Yes
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 50 A rms nominal, ±150 A range
SCHOTTKYarray SERIES 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SILICON, MIXER DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| STPSC1206 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| NSR0530P2T5G |
Schottky Barrier Diode
30V 0.5A low VF SOD-923 Schottky Diode 0.5 A, 30 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
| MMBTH10 MMBTSA1037 MMBTSA1162 MMBTSA1182 1SS390 MM |
NPN Silicon VHF/UHF Transistor
PNP Silicon Epitaxial Planar Transistor
SILICON EPITAXIAL PLANAR DIODE
NPN Silicon Epitaxial Planar Transistors
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PNP SILICON EPITAXIAL POWER TRANSISTOR
BAND SWITCHING DIODE
SILICON EPITAXIAL PLANAR SWITCHING DIODE
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
SEMTECH ELECTRONICS LTD...
|
| DSS25-0025B DSS25-0025 |
Power Schottky Rectifier 25 A, 25 V, SILICON, RECTIFIER DIODE, TO-220
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
