PART |
Description |
Maker |
T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
30W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
MRF137 |
The RF MOSFET Line 30W, to 400MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦,28V的,1 GHz的LDMOS的场效应 60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
T1G4005528-FS T1G4005528-FS-EVB1 T1G6001528-Q3 T1G |
55W, 28V, DC ?3.5GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
CGH27030F |
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
CGH27015F |
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
MGFS45V2735 MGFS45V273511 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
MGFS45V2527A MGFS45V2527A11 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
TGA2624-CP TGA2624-CP-15 |
9 to 10 GHz, 16 W GaN Power Amplifier
|
TriQuint Semiconductor
|