| PART |
Description |
Maker |
| 2SB1179 2SB1179A |
For Power Amplification And Switching
|
Panasonic Semiconductor
|
| 2SB1274 |
General Purpose Switching and Amplification.
|
SeCoS Halbleitertechnol...
|
| 2SD1994A |
Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification)
|
Panasonic Semiconductor
|
| 2SB950 2SB950A 2SD1276A 2SD1276 |
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
|
PANASONIC CORP
PANASONIC[Panasonic Semiconductor]
|
| A42 |
Epitaxial planar die construction. Ideal for medium power amplification and switching.
NPN High Voltage Transistors
|
TY Semiconductor Co., L...
TY Semicondutor
|
| 2SD1775 2SD1775A |
Silicon NPN triple diffusion planar type(For high-speed switching and high current amplification ratio)
|
PANASONIC[Panasonic Semiconductor]
|
| 2N5551 |
Switching and amplification in high voltage High voltage(max.180V)
|
TY Semiconductor Co., L...
|
| 2SB1710 |
MS (MIL-C-5015) SERIES 97 3106B SPLIT SHELL STRAIGHT PLUGS, STRAIGHT BODY STYLE, SOLDER TERMINATION, 20 SHELL SIZE, 20-15 INSERT ARRANGEMENT, PLUG
General purpose amplification (−30V −1A)
General purpose amplification (-30V, -1A)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| XN1B301 XN0B301 |
For general amplification
|
PANASONIC[Panasonic Semiconductor]
|
| LA4302T |
8.5W X 1(BTL) /4W POWER AMPLIFICATION
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
