PART |
Description |
Maker |
2SC5026 |
Silicon NPN Epitaxial Planar Type Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
BC327-16 BC327-25 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
|
2SB1561-Q |
Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-60V
|
TY Semiconductor Co., Ltd
|
DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
2SC4852 |
Small output capacitance. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|