| PART |
Description |
Maker |
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| 3SK0273 |
Gallium Arsenide Devices
|
Panasonic
|
| GN05013N |
Gallium Arsenide Devices
|
Panasonic
|
| GN01010 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01025 |
Gallium Arsenide Devices
|
Panasonic
|
| GN01068B |
Gallium Arsenide Devices
|
Panasonic
|
| GN01067B |
Gallium Arsenide Devices
|
Panasonic
|
| OH10024 |
Gallium Arsenide Devices
|
Panasonic
|
| 3SK0183 |
Gallium Arsenide Devices
|
Panasonic
|
| DGSK32-018CS DGS15-018CS |
Gallium Arsenide Schottky Rectifier Second generation
Gallium Arsenide Schottky Rectifier Second generation 24 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-252AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
