PART |
Description |
Maker |
T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
RF3930D |
10W GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
STK4362 |
AF Power Amplifier (10W 10W min, THD = 1.0%)
|
SANYO[Sanyo Semicon Device]
|
STK4112 STK4112II |
AF Power Amplifier (Split Power Supply) (10W 10W min/ THD = 0.4%) AF Power Amplifier (Split Power Supply) (10W 10W min, THD = 0.4%)
|
SANYO[Sanyo Semicon Device]
|
LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP |
300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX 300MHz to 7GHz RF Power Detector in SC70
|
Linear Technology, Corp.
|
NTE7105 |
Integrated Circuit Dual 10W 10W Stereo Amplifier
|
NTE Electronics
|
TA1101B |
Stereo 10W (4? Class-T Digital Audio Amplifier using Digital Power Processing Technology Stereo 10W (4з) Class-T⑩ Digital Audio Amplifier using Digital Power Processing⑩ Technology Stereo 10W (4) Class-T Digital Audio Amplifier using Digital Power Processing Technology Stereo 10W (4з) Class-TDigital Audio Amplifier using Digital Power ProcessingTechnology
|
TRIPATH[Tripath Technology Inc.] ETC Electronic Theatre Controls, Inc.
|
EIM1011-4 |
10.7-11.7GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
|
RF5602 |
3GHz To 2.7GHz Linear Power Amplifier
|
RF Micro Devices
|