PART |
Description |
Maker |
TGA2583-SM TGA2583-SM-15 |
2.7 to 3.7GHz, 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
TGA2216-SM TGA2216-SM-15 |
0.1 3.0GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
T2G6000528-Q3-15 T2G6000528-Q3-EVB5 T2G6000528-Q3- |
10W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
LTC5508 LTC5508ESC6 LTC5508ESC6TRM LTC5508ESC6TRMP |
300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package; Package: SC70; No of Pins: 6; Temperature Range: -40°C to 125°C 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX 300MHz to 7GHz RF Power Detector in SC70
|
Linear Technology, Corp.
|
TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
NTE7105 |
Integrated Circuit Dual 10W 10W Stereo Amplifier
|
NTE Electronics
|
TDA7297SA |
10W 10W DUAL BRIDGE AMPLIFIER
|
STMicroelectronics
|
TA2024 |
Stereo 10W (4з) Class-TDigital Audio Amplifier using Digital Power ProcessingTechnology Stereo 10W (4) Class-T Digital Audio Amplifier using Digital Power Processing Technology Stereo 10W (4蟹) Class-T Digital Audio Amplifier using Digital Power Processing Technology Stereo 10W (4з) Class-T⑩ Digital Audio Amplifier using Digital Power Processing⑩ Technology
|
Electronic Theatre Controls, Inc. ETC TRIPATH
|
EIA1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
RF5602WB33PCK-410 RF5602HWLPCK-410 RF5602SR RF5602 |
3.0V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
EIA1819-2P EIB1819-2P |
18.7-19.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|