| PART |
Description |
Maker |
| 1N4981D 1N4973C 1N4955D 1N4957D 1N4957C 1N4964D 1N |
Diode Zener Single 91V 1% 5W 2-Pin Case E
Diode Zener Single 43V 2% 5W 2-Pin Case E
Diode Zener Single 7.5V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 2% 5W 2-Pin Case E
Diode Zener Single 18V 1% 5W 2-Pin Case E
Diode Zener Single 10V 2% 5W 2-Pin Case E
Diode Zener Single 12V 1% 5W 2-Pin Case E
Diode Zener Single 51V 1% 5W 2-Pin Case E
Diode Zener Single 36V 2% 5W 2-Pin Case E
Diode Zener Single 15V 1% 5W 2-Pin Case E
Diode Zener Single 20V 1% 5W 2-Pin Case E
Diode Zener Single 75V 1% 5W 2-Pin Case E
Diode Zener Single 100V 2% 5W 2-Pin Case E
Diode Zener Single 100V 1% 5W 2-Pin Case E
Diode Zener Single 11V 1% 5W 2-Pin Case E
Diode Zener Single 75V 2% 5W 2-Pin Case E
Diode Zener Single 56V 1% 5W 2-Pin Case E
Diode Zener Single 24V 1% 5W 2-Pin Case E
Diode Zener Single 24V 2% 5W 2-Pin Case E
Diode Zener Single 10V 1% 5W 2-Pin Case E
Diode Zener Single 13V 2% 5W 2-Pin Case E
Diode Zener Single 30V 1% 5W 2-Pin Case E
Diode Zener Single 39V 1% 5W 2-Pin Case E
|
New Jersey Semiconductor
|
| HDF1205S HDF2415D HDF2412D HDF2412S HDF1215S HDF24 |
NTE Silicon General Purpose Amplifier, Type: NPN
Thermal Fuse; Current Rating:15A; Opening Temperature:240 C; Fuse Terminals:Axial Lead; Voltage Rating:277V; Fuse Size/Group:3.22 "; Voltage Rating:277V RoHS Compliant: Yes 3瓦特HD系列
3 Watt HD Series 3瓦特HD系列
Waveform Generator; IC Function:Waveform Generator IC; Package/Case:14-DIP; Supply Current:15mA; Supply Voltage:36V; Supply Voltage Max:30V; Supply Voltage Min:10V; Frequency Max:200kHz
Audio Power Amplifier IC; Output Power, Po:325mW; Load Impedance Min:8ohm; Supply Voltage Max:12V; Supply Voltage Min:4V; Package/Case:8-DIP; Amplifier Type:; Bias Current:250nA; Number of Amplifiers:1; Offset Voltage:50kV
IC-QUAD COMPARATOR
Operational Amplifier (Op-Amp) IC; Number of Amplifiers:2; Bandwidth Max:4MHz; Slew Rate:13V/us; Package/Case:8-DIP; Dual Supply Voltage Max ( /- V):18V; Mounting Type:Through Hole
Operational Amplifier (Op-Amp) IC; No. of Amplifiers:1; Amplifier Type:; Slew Rate:13V/us; Bandwidth Max:4MHz; Bias Current:7nA; Dual Supply Voltage Max ( V):18V; Gain:4dB; Offset Voltage:13mV; Package/Case:8-DIP RoHS Compliant: Yes
IC-QUAD JFET INPUT OP AMP
|
Shindengen Electric Manufacturing Co., Ltd.
Shindengen Electric Manufacturing Company, Ltd.
Shindengen Electric Mfg. Co., Ltd.
|
| 5-1825059-8 |
DIP, Rotary DIP, SIP Switches and DIP Shunts - Standard; ADF12SATTR04=DIP,FLUSH,SMT-JL ( Tyco Electronics )
|
Tyco Electronics
|
| MDRC |
Dual Inline Package, Molded DIP, 16 Pin, Rugged, Molded Case Construction, Highly Stable, Automatic Insert Compatible, Reduces Assembly Costs
|
Vishay
|
| 1571983-1 ADF0404 1-1825002-3 ADF0204 ADF02STTR04 |
Switches Core Program
DIP Switches - GD Series, High Feature Line
DIP, Rotary DIP, SIP Switches and DIP Shunts - Standard; GDH02S04=DIP SWITCH ( Tyco Electronics )
Slide Switches
Pushbutton Switches
Snap Action Switches
|
Tyco Electronics
|
| HDC-CTF HDC-CTF1 HDE-CTF1 HDA-CTF HDA-CTF1 HDB-CTF |
CTF SERIES PLASTIC D SUBMINIATURE SHELL(ACCESSORIES)
Bridge Rectifier; Package/Case:DO-7; Current Rating:2A; Mounting Type:Through Hole CTF系列塑料微型壳牌（附件）
CTF SERIES PLASTIC D SUBMINIATURE SHELL(ACCESSORIES) CTF系列塑料微型壳牌（附件）
IC-DUAL OP AMP-8 PIN DIP
IC,Audio Amplifier,SINGLE,DIP,14PIN,PLASTIC RoHS Compliant: Yes
375W LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR
IC-MOS ADAPTER FOR 6800
|
HIROSE ELECTRIC Co., Ltd.
http://
Diodes Incorporated
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| LB66B2 LB66B2-67B LB66B2-67CB LB66B2-67U LB66B2-76 |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
http://
CTS Corporation
|
| 15KPA110 15KPA90CA 15KPA110A 15KPA28C 15KP13C 15KP |
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 90V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 110V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 28V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 13V 15KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 85V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 58V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 48V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 40V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 40V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 33V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 43V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 43V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 45V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 33V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 36V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 16V 15KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 17V 15KW 2-Pin Case P600
Diode TVS Single Bi-Dir 64V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 24V 15KW 2-Pin Case 5A
Diode TVS Single Bi-Dir 24V 15KW 2-Pin Case 5A
Diode TVS Single Uni-Dir 240V 15KW 2-Pin Case 5A
Diode TVS Single Bi-Dir 240V 15KW 2-Pin Case 5A
Diode TVS Single Bi-Dir 75V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Uni-Dir 75V 15KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 75V 15KW 2-Pin Case P600 Tape and Ammo
Diode TVS Single Bi-Dir 75V 15KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 15V 15KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 78V 15KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM
1048576 x 4 BIT DYNAMIC RAM
Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
|
http://
Toshiba Semiconductor
Toshiba Corporation
|
| 2N5555 ON0063 |
CASE 29.04, STYLE 5 TO-92 (TO-226AA)
CASE 29-4, STYLE 5TO-2 (TO-26AA)
From old datasheet system
JFET Switching
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
