| PART |
Description |
Maker |
| RJK0855DPB RJK0855DPB-15 |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching
80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 30CTQ100S 30CTQ100-1 30CTQ080S 30CTQ080-1 30CTQ... |
SCHOTTKY RECTIFIER
80V 30A Schottky Common Cathode Diode in a TO-262 package
|
IRF[International Rectifier]
IRF
|
| D44VH10 D44VH-D D45VH D45VH10 |
Power 15A 80V NPN
Complementary Silicon Power Transistors
Power 15A 80V PNP
|
ON Semiconductor
|
| RS1X-13-F RS1GB-13-F RS1J-13-F RS1D-13-F RS1K-13-F |
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.3V-vf 150ns 5uA-ir SMB 3K/REEL-13 1 A, 400 V, SILICON, SIGNAL DIODE
RECTIFIER FAST-RECOVERY SINGLE 1A 600V 30A-ifsm 1.3V-vf 250ns 5uA-ir SMA 5K/REEL-13 1 A, 600 V, SILICON, SIGNAL DIODE
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1.3V-vf 150ns 5uA-ir SMA 5K/REEL-13 1 A, 200 V, SILICON, SIGNAL DIODE
RECTIFIER FAST-RECOVERY SINGLE 1A 800V 30A-ifsm 1.3V-vf 500ns 5uA-ir SMA 5K/REEL-13 1 A, 800 V, SILICON, SIGNAL DIODE
RECTIFIER FAST-RECOVERY SINGLE 1A 400V 30A-ifsm 1.3V-vf 150ns 5uA-ir SMA 5K/REEL-13 1 A, 400 V, SILICON, SIGNAL DIODE
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
|
Diodes Incorporated
Diodes, Inc.
|
| 2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB
POWER TRANSISTORS(4A/80V/30W)
POWER TRANSISTORS(4A,80V,30W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| SB300-09R |
90V/ 30A Rectifier
90V 30A Rectifier
90V, 30A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| 2SB920 2SB920L 2SD1236L |
80V/5A Switching Applications 80V/5A开关应
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| 0923181612 92318-1612 |
Picoflex? PF-50 IDT-Board In Z-Style, 16 Circuits, 0.12m (4.72) Length
|
Molex Electronics Ltd.
|
| SSE90P06-08P |
-90A , -60V , RDS(ON) 12m P-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| 2SB922L 2SD1238L 2SD1238LR 2SB922LS |
Dual/Triple-Voltage µP Supervisory Circuits
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 12A I(C)
80V/12A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| BST52TA |
80V NPN SILICON PLANAR DARLINGTON TRANSISTOR IN SOT89
|
Diodes
|
